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NXP Semiconductors
PESDxL2BT series
Low capacitance double bidirectional ESD protection diodes in SOT23
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
P PP
I PP
T j
T amb
T stg
Parameter
peak pulse power
PESD3V3L2BT
PESD5V0L2BT
PESD12VL2BT
PESD15VL2BT
PESD24VL2BT
peak pulse current
PESD3V3L2BT
PESD5V0L2BT
PESD12VL2BT
PESD15VL2BT
PESD24VL2BT
junction temperature
ambient temperature
storage temperature
Conditions
t p = 8/20 μ s
t p = 8/20 μ s
[1][2]
[1][2]
Min
-
-
-
-
-
-
-
-
-
-
-
? 65
? 65
Max
350
350
200
200
200
15
13
5
5
3
150
+150
+150
Unit
W
W
W
W
W
A
A
A
A
A
° C
° C
° C
[1]
[2]
Non-repetitive current pulse 8/20 μ s exponential decay waveform according to IEC 61000-4-5.
Measured from pin 1 to 3 or 2 to 3.
Table 6.
ESD maximum ratings
Symbol
V ESD
Parameter
electrostatic discharge
Conditions
IEC 61000-4-2
[1][2]
Min
Max
Unit
voltage
(contact discharge)
PESD3V3L2BT
-
30
kV
PESD5V0L2BT
PESD12VL2BT
PESD15VL2BT
PESD24VL2BT
-
23
kV
PESDxL2BT series
HBM MIL-STD883
-
10
kV
[1]
[2]
Device stressed with ten non-repetitive ESD pulses.
Measured from pin 1 to 3 or 2 to 3.
Table 7.
ESD standards compliance
PESDXL2BT_SER_2
ESD Standard
IEC 61000-4-2, level 4 (ESD)
HBM MIL-STD883, class 3
Conditions
> 15 kV (air); > 8 kV (contact)
> 4 kV
? NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 25 August 2009
3 of 14
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